Thermodynamic analysis of the silicon carbide synthesis in complex metal melts
Keywords:
silicon carbide, synthesis in a metal melt, iron, nickel, cobalt, manganeseAbstract
The Me–Si–C systems which contain metal melt are the basis of a promising technique for growing single crystals of silicon carbide. Such techniques necessitate the search for metal compositions with relatively low melting points, which would preserve the ability to dissolve silicon and carbon in sufficient amounts. The increasing complexity of metal melt compositions based on the elements of the iron subgroup enables to achieve the desired effect. To search new compositions of fusible metal melts, i.e. catalysts of silicon carbide crystals growth, it is advisable to use the liquidus surface of the Fe–(...)–Si–C systems.
The aim of this work was to make thermodynamic modeling of the Fe–(...)–Si–C systems to identify opportunities for reducing the metal melt temperature in equilibrium with silicon carbide.
The “Phase Diagram” block of the software package “FactSage” (version 6.4) developed by “Thermfact” (Canada) and “GTT Technologies” (Germany) were used for thermodynamic modeling.
During this investigation liquidus surfaces of the Fe–Ni–Si–C, Fe–Co–Si–C, Fe–Mn–Si–C and Fe–Ni–Co–Mn–Si–C systems were calculated.
Phase diagrams presented in the form of surface liquidus enablesilicon carbide; synthesis in a metal melt; iron; nickel; cobalt; manganese not only to determine metal composition with the lowest melting point, but also to visualize the range of concentrations and temperatures for which SiC is the reaction product of metal components. This is especially useful in the mode selection process of growing silicon carbide crystals.
References
Kawanishi, S. Equilibrium Phase Relationship between SiC and a Liquid Phase in the Fe–Si–C System at 1523–1723 K / S. Kawanishi, T. Yoshikawa, T. Tanaka // Materials Transactions. – 2009. – Vol. 50, no 4. – Р. 806–813. doi: 10.2320/matertrans.MRA2008404.
Yoshikawa, T. Fundamental study for solvent growth of silicon carbide utilizing Fe-Si melt / T. Yoshikawa, S. Kawanishi, T. Tanaka // Journal of Physics: Conference Series. 165 (2009) 012022. IP address: 5.79.141.174. doi: 10.1088/1742-6596/ 165/1/012022.
Трофимов, Е.А. Термодинамический анализ условий образования карбида кремния в металлическом расплаве системы Fe–Ni–Si–C / Е.А. Трофимов, С.В. Рябошук // Современные проблемы электрометаллургии стали: материалы XV Междунар. науч. конф. Ч. 1. – Челябинск: Издат. центр ЮУрГУ, 2013. – С. 42–43.
Olesinski, R.W. C–Si (Carbon–Silicon) / R.W. Olesinski, G.J. Abbaschian // Binary Alloy Phase Diagrams, Second Edition, Ed. T.B. Massalski, ASM International, Materials Park, Ohio. – 1990. – Vol. 1. – Р. 882–883.
Scace, R.I. The Si–C and Ge–C phase diagrams / R.I. Scace, G.A. Slack // Silicon Carbide, High Temperature Semiconductor, Proceedings of the Conference, Boston, 1960. – Р. 24–28.
Ishida, K. Co–Si (Cobalt–Silicon) / K. Ishida, T. Nishizawa // Binary Alloy Phase Diagrams, Second Edition, Ed. T.B. Massalski, ASM International, Materials Park, Ohio. – 1990. – Vol. 2. – Р. 1235–1239.
Application of MTDATA to the Modeling of Multicomponent Equilibria / R.H. Davies, A.T. Dinsdale, T.G. Chart et al. // Materials Chemistry at High Temperatures. Vol. 1. Characterization / Ed. by W. Hastie. – Springer Science + Business Media New York, 1990. – P. 251–262. doi: 10.1007/978-1-4612-0481-7_19.
Gokhale, A.B. Mn–Si (Manganese–Silicon) / A.B. Gokhale, G.J. Abbaschian // Binary Alloy Phase Diagrams, Second Edition, Ed. T.B. Massalski, ASM International, Materials Park, Ohio. – 1990. – Vol. 3. – Р. 2602–2604.
Kaufman, L. Coupled phase diagrams and thermochemical data for transition metal binary systems-III / L. Kaufman // Calphad: Computer Coupling of Phase Diagrams and Thermochemistry. – 1978. – Vol. 2. – Р. 117–146. doi: 10.1016/0364-5916(78)90031-7.
Gokcen, N.A. Mn–Ni (Manganese–Nickel) / N.A. Gokcen // Binary Alloy Phase Diagrams, Second Edition, Ed. T.B. Massalski, ASM International, Materials Park, Ohio. – 1990. – Vol. 3. – Р. 2580–2583.




