The Evolution of a Ti Film/Silumin Substrate System Irradiated by a Pulse Electron Beam

Authors

  • Dmitry Valer'evich Zaguliaev Siberian State Industrial University, Novokuznetsk
  • Yurii Fedorovich Ivanov Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences (IHCE SB RAS), Tomsk
  • Oleg Sergeevich Tolkachev Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences (IHCE SB RAS), Tomsk
  • Vitaly Vladislavovich Shlyarov Siberian State Industrial University, Novokuznetsk
  • Yulia Andreevna Shliarova Siberian State Industrial University, Novokuznetsk

DOI:

https://doi.org/10.14529/mmph240308

Keywords:

silumin, titanium, film/substrate system, pulsed electron beam, elemental and phase composition, defect substructure

Abstract

The electron beam treatment of metal surfaces involves the use of intense pulsed electron beams to improve a wide range of surface properties of different materials. Research has shown that it can lead to a marked reduction in surface roughness and porosity and a marked increase in tensile strength and ductility. Processed samples also have improved hardness, wear resistance, and anti-corrosion properties, which emphasizes the effectiveness of electron beam surface treatment in materials science. This work studies the irradiation of a Ti film/silumin substrate system showing it leads to the transformation of both the Ti film and the silumin layer with different energy densities, which has a different effect on the structure and composition. When treated with an electron beam at an energy density of 30 J/cm2, the Ti film and the silumin layer undergo complete dissolution, resulting in a complex submicron crystalline structure characterized by the presence of silicon particles distributed along grain boundaries. Irradiation with an electron beam of the Ti film/silumin substrate system at different energy densities (10, 15, 30 J/cm2) leads to a change in surface morphology, crystallite size, and phase composition, and an increase in energy density leads to the melting of the Ti film and the silumin layer.

Author Biographies

Dmitry Valer'evich Zaguliaev, Siberian State Industrial University, Novokuznetsk

Doctor of Technical Sciences, Associate Professor

Yurii Fedorovich Ivanov, Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences (IHCE SB RAS), Tomsk

Doctor of Physical and Mathematical Sciences, Professor

Oleg Sergeevich Tolkachev, Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences (IHCE SB RAS), Tomsk

Junior Researcher of the Laboratory of Plasma Emission Electronics

Vitaly Vladislavovich Shlyarov, Siberian State Industrial University, Novokuznetsk

graduate student

Yulia Andreevna Shliarova, Siberian State Industrial University, Novokuznetsk

graduate student

Published

2024-08-11

Issue

Section

Physics