Silumin, thermodynamics and kinetics of crystallization diffusion, convection, inhomogeneous magnetic field, silicon, silicon fluxes, microstructure
Abstract
This paper deals with the problem of controlling the process of silicon dispersion in a crystallizing silumin melt by means of an inhomogeneous permanent magnetic field. It is established that during crystallization of the silumin melt in an inhomogeneous permanent magnetic field, diffusive and convective flows of silicon are activated near the crystallization front. A physical and mathematical model of the process of influence of an inhomogeneous permanent magnetic field on secondary silicon ions near the crystallization front is proposed. The total flux of silicon atoms (ions) caused by two mechanisms is calculated: the first is classical diffusion caused by the silicon concentration gradient at the crystal-melt boundary; and the second is the force effect of an inhomogeneous magnetic field on magnetic dipoles of silicon near the crystallization front. Microstructural analysis of silumin specimen slits obtained during their crystallization in an inhomogeneous permanent magnetic field confirms the effect of this field on the formation of a given structure.
Author Biographies
Gennady Alekseevich Dubsky, Nosov Magnitogorsk State Technical University, Magnitogorsk
Cand. Sc. (Physics and Mathematics), Associate Professor, Department of Physics
Nadezhda Igorevna Misheneva, Nosov Magnitogorsk State Technical University, Magnitogorsk
Senior Lecturer, Department of Physics
Denis Mikhailovich Dolgushin, Nosov Magnitogorsk State Technical University, Magnitogorsk
Cand. Sc. (Physics and Mathematics), Associate Professor, Head of the Physics Department
Alexander Alekseevich Nefediev, Nosov Magnitogorsk State Technical University, Magnitogorsk
Cand. Sc. (Engineering), Senior Lecturer, Department of Physics
Viktor Vktorovich Mavrinsky, Nosov Magnitogorsk State Technical University, Magnitogorsk
Cand. Sc. (Physics and Mathematics), Associate Professor, Department of Physics
