Photoresistic Effect in Pb1–xCdₓS Films Produced by Vacuum Deposition

Authors

  • Boris Grigor'evich Polevoy South Ural State University, Chelyabinsk
  • Danil Il'ich Nenarokomov South Ural State University, Chelyabinsk
  • Dmitriy Evgen'evich Zhivulin South Ural State University, Chelyabinsk
  • Dmitriy Anatol'evich Zherebtsov South Ural State University, Chelyabinsk
  • Alexander Gennadevich Vorontsov South Ural State University, Chelyabinsk
  • Dmitriy Yul'evich Godovskiy Polyn Technology LTD, Moscow

DOI:

https://doi.org/10.14529/mmph260109

Keywords:

thin films, vacuum deposition, photoresistive materials, cadmium sulfide, lead sulfide

Abstract

This paper aims to obtain thin photoresistive films of lead sulfide doped with cadmium using magnetron sputtering and electron beam evaporation in a vacuum. It describes the methods of solid-phase synthesis of lead-cadmium sulfide solid solutions of the required composition and sintering of a ceramic target for DC magnetron sputtering. The composition of the resulting targets corresponds to a homogeneous solid solution based on galena. Pb0,96Cd0,04S films were deposited by spluttering a ceramic target with magnetron DC spraying onto sitall and silicon substrates. The phase composition of the deposited films corresponds to that of the sputtered target and the resulting films exhibit a photoresistive effect. The authors determined the dark-light resistance ratio and time constants of the obtained photoresistive films. Pb0,96Cd0,04S films on silicon substrates exhibit higher sensitivity compared to those deposited on sitall. Pb0,88Cd0,12S and CDs were deposited by electron beam evaporation from a graphite crucible. Pb0,88Cd0,12S films deposited using the electron beam method showed no photoresistive effect. The best dark-light resistance ratio and a time constant of 25 microseconds were demonstrated by Pb0,96Cd0,04S films on a silicon substrate.

Author Biographies

Boris Grigor'evich Polevoy, South Ural State University, Chelyabinsk

Cand. Sc. (Physics and Mathematics), Associate Professor, Department of Physics of Nanoscale Systems

Danil Il'ich Nenarokomov, South Ural State University, Chelyabinsk

Engineer, Department of Physics of Nanoscale Systems

Dmitriy Evgen'evich Zhivulin, South Ural State University, Chelyabinsk

Cand. Sc. (Chemical), Researcher at the RML of Electromechanical, Electronic and Electrochemical Systems, Junior Researcher at the Crystal Growth Laboratory, Associate Professor of the Department of Materials Science and Physics-Chemistry of Materials

Dmitriy Anatol'evich Zherebtsov, South Ural State University, Chelyabinsk

Dr. Sc. (Chemical), Senior Researcher at the Department of Materials Science and Physics-Chemistry of Materials, Senior Researcher at the Laboratory of Environmental Problems of Post-Industrial Agglomeration

Alexander Gennadevich Vorontsov, South Ural State University, Chelyabinsk

Dr. Sc. (Physics and Mathematics), Professor, Head of the Nanoscale Systems Physics Department

Dmitriy Yul'evich Godovskiy, Polyn Technology LTD, Moscow

Dr. Sc. (Physics and Mathematics), Chief Scientist Officer

Published

2026-02-01

Issue

Section

Physics